Firewire

FireWire, originally developed by  Apple Computer, Inc is a cross platform implementation of the high speed  serial data bus –define by the  IEEE 1394-1995 [FireWire 400],IEEE 1394a-2000 [FireWire 800]  and IEEE  1394b standards-that move large amounts of data between computers and peripheral  devices. Its features simplified cabling, hot swapping and transfer speeds of upto 800 megabits per second. FireWire is a high-speed serial input/output (I/O) technology for connecting peripheral devices to a computer or to each other. It is one of the fastest peripheral standards ever developed and now, at 800 megabits per second (Mbps), its even faster .Based on Apple-developed technology, FireWire was adopted in 1995 as an official industry standard (IEEE 1394) for cross-platform peripheral connectivity. By providing a high-bandwidth, easy-to-use I/O technology, FireWire inspired a new generation of consumer electronics devices from many companies, including Canon, Epson, HP, Iomega, JVC, LaCie, Maxtor, Mitsubishi, Matsushita (Panasonic), Pioneer, Samsung, Sony and Texas Instruments. Products such as DV camcorders, portable external disk drives and MP3 players like the Apple iPod would not be as popular as they are today with-out FireWire. FireWire has also been a boon to professional users because of the high-speed connectivity it has brought to audio and video production systems. In 2001, the Academy of Television Arts & Sciences presented Apple with an Emmy award in recognition of the contributions made by FireWire to the television industry. Now FireWire 800, the next generation of FireWire technology, promises to spur the development of more innovative high-performance devices and applications. FireWire800 (an implementation of the IEEE 1394b standard approved in 2002) doubles the throughput of the original technology, dramatically increases the maximum distance of FireWire connections, and supports many new types of cabling. This technology brief describes the advantages of FireWire 800 and some of the applications for which it is ideally suited.

FRAM

A ferroelectric memory cell consists of a ferroelectric capacitor and a MOS transistor. Its construction is similar to the storage cell of a DRAM. The difference is in the dielectric properties of the material between the capacitor's electrodes. This material has a high dielectric constant and can be polarized by an electric field. The polarisation remains until it gets reversed by an opposite electrical field. This makes the memory non-volatile. Note that ferroelectric material, despite its name, does not necessarily contain iron. The most well-known ferroelectric substance is BaTiO3.

A Ferroelectric memory cell consists of a ferroelectric capacitor and a MOS transistor. Its construction is similar to the storage cell of a DRAM. The difference is in the dielectric properties of the material between the capacitor's electrodes. This material has a high dielectric constant and can be polarized by an electric field. The polarisation remains until it gets reversed by an opposite electrical field. This makes the memory non-volatile.

Data is read by applying an electric field to the capacitor. If this switches the cell into the opposite state (flipping over the electrical dipoles in the ferroelectric material) then more charge is moved than if the cell was not flipped. This can be detected and amplified by sense amplifiers. Reading destroys the contents of a cell which must therefore be written back after a read. This is similar to the precharge operation in DRAM, though it only needs to be done after a read rather than periodically as with DRAM refresh.

FRAM is found mainly in consumer devices and because of its low power requirements, could also be used in devices that only need to activate for brief periods. FRAM allows systems to retain information even when power is lost, without resorting to batteries, EEPROM, or flash. Access times are the same as for standard SRAM, so there's no delay-at-write access as there is for EEPROM or flash. In addition, the number of write cycles supported by the FRAM components is nearly unlimited—up to 10 billion read/writes. FRAM combines the advantages of SRAM - writing is roughly as fast as reading, and EPROM - non-volatility and in-circuit programmability

Face Recognition Technology

The information age is quickly revolutionizing the way transactions are completed. Everyday actions are increasingly being handled electronically, instead of with pencil and paper or face to face. This growth in electronic transactions has resulted in a greater demand for fast and accurate user identification and authentication. Access codes for buildings, banks accounts and computer systems often use PIN's for identification and security clearences.

Using the proper PIN gains access, but the user of the PIN is not verified. When credit and ATM cards are lost or stolen, an unauthorized user can often come up with the correct personal codes. Despite warning, many people continue to choose easily guessed PIN's  and passwords: birthdays, phone numbers and social security numbers. Recent cases of identity theft have hightened the nee for methods to prove that someone is truly who he/she claims to be.

Face recognition technology may solve this problem since a face is undeniably connected to its owner expect in the case of identical twins. Its nontransferable. The system can then compare scans to records stored in a central or local database or even on a smart card.